smd type features high f t (f t =1.5ghztyp). high current (i c = 300ma). adoption of fbet process. absolute maximum ratings ta = 25 parameter symbol rating unit collector-base voltage v cbo -30 v collector-emitter voltage v ceo -20 v emitter-base voltage v ebo -3 v collector current i c -300 ma collector current (pulse) i cp -600 ma p c 500 p c* 1300 jumction temperature t j 150 storage temperature range t stg -55to+150 * mounted on ceramic board (250 mm 2 x 0.8 mm) collector power dissipation mw electrical characteristics ta = 25 parameter symbol testconditons min typ max unit collector cut-off current i cbo v cb = -20v , i e =0 -0.1 a emitter cut-off current i ebo v eb =-2v,i c =0 -0.1 a v ce =-5v,i c = -50ma 15 100 v ce =-5v,i c = -300ma 5 collector-emitter saturation voltage v ce(sat) i c = -100ma , i b = -10ma -0.4 -1.0 v base-emitter saturation voltage v be(sat) i c = -100ma , i b = -10ma -0.9 -1.2 v transition frequency f t v ce =-5v,i c = -100ma 1.5 ghz collector output capacitance c ob v cb = -10v , i e = 0 , f = 1mhz 4.9 pf reverse transfer capacitance c re v cb = -10v , i e = 0 , f = 1mhz 4.4 pf dc current gain h fe marking marking aj sales@twtysemi.com 1 of 3 http://www.twtysemi.com 2SA1724 product specification 4008-318-123
smd type electrical characteristics curves sales@twtysemi.com 2of 3 http://www.twtysemi.com 2SA1724 product specification 4008-318-123
smd type 2SA1724 sales@twtysemi.com 3 of 3 http://www.twtysemi.com product specification 4008-318-123
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